Discrete Semiconductor Products
STW9NK90Z
ActiveSTMicroelectronics
N-CHANNEL 900 V, 1.1 OHM TYP., 8 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW9NK90Z
ActiveSTMicroelectronics
N-CHANNEL 900 V, 1.1 OHM TYP., 8 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW9NK90Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2115 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW9NK90Z Series
The SuperMESH series is obtained through an optimization of STMicroelectronics wellestablished strip-based PowerMESH layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs full range of high voltage power MOSFETs.
Documents
Technical documentation and resources