Discrete Semiconductor Products

APT50GS60BRDQ2G

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IGBT NPT 600V 93A TO247

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Discrete Semiconductor Products

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IGBT NPT 600V 93A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT50GS60BRDQ2G

Current - Collector (Ic) (Max) [Max]	93 A
Current - Collector Pulsed (Icm)	195 A
Gate Charge	235 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	415 W
Reverse Recovery Time (trr)	25 ns
Supplier Device Package	TO-247 [B]
Switching Energy	755 µJ
Test Condition	15 V, 4.7 Ohm, 40 A, 400 V
Vce(on) (Max) @ Vge, Ic	3.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Switching Energy	Mounting Type	Test Condition	Supplier Device Package	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	IGBT Type	Reverse Recovery Time (trr)
Microchip Technology APT50GS60BRG	-55 °C	150 °C	3.15 V	93 A	195 A	755 µJ	Through Hole	4.7 Ohm 15 V 50 A 400 V	TO-247 [B]	235 nC	415 W	600 V	TO-247-3	NPT
Microchip Technology APT50GS60BRDQ2G	-55 °C	150 °C	3.15 V	93 A	195 A	755 µJ	Through Hole	4.7 Ohm 15 V 40 A 400 V	TO-247 [B]	235 nC	415 W	600 V	TO-247-3	NPT	25 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 14.64

General part information

IGBT NPT 600 V 93 A 415 W Through Hole TO-247 [B]

Technical documentation and resources