Specification	NVTFWS027N10MCLTAG

Current - Continuous Drain (Id) @ 25°C	28 A, 7.4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	46 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NVTFS027N10MCL Series

Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Technology	Package / Case
ON Semiconductor NVTFWS027N10MCLTAG	11.5 nC	20 V	Automotive	4.5 V 10 V	3.1 W 46 W	100 V	7.4 A 28 A	26 mOhm	N-Channel	800 pF	AEC-Q101	-55 °C	175 ░C	3 V	Surface Mount	8-WDFN (3.3x3.3)	MOSFET (Metal Oxide)	8-PowerWDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ

Technical documentation and resources