Catalog
Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ
Key Features
• Small Footprint (3x3 mm)
• Low RDS(on)
• Low QG and Capacitance
• Wettable Flank Option available
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
Beta
⌘K
Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ
Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Grade | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 11.5 nC | 20 V | Automotive | 4.5 V 10 V | 3.1 W 46 W | 100 V | 7.4 A 28 A | 26 mOhm | N-Channel | 800 pF | AEC-Q101 | -55 °C | 175 ░C | 3 V | Surface Mount | 8-WDFN (3.3x3.3) | MOSFET (Metal Oxide) | 8-PowerWDFN |