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ROHM BD49K27G-TL
Discrete Semiconductor Products

NDS352AP

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ON Semiconductor

P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -30V, -0.9A, 300MΩ

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ROHM BD49K27G-TL
Discrete Semiconductor Products

NDS352AP

Active
ON Semiconductor

P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -30V, -0.9A, 300MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNDS352AP
Current - Continuous Drain (Id) @ 25°C900 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs300 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.37
100$ 0.26
500$ 0.20
1000$ 0.16
Digi-Reel® 1$ 0.43
10$ 0.37
100$ 0.26
500$ 0.20
1000$ 0.16
Tape & Reel (TR) 3000$ 0.15
6000$ 0.14
9000$ 0.13
30000$ 0.13
75000$ 0.12
NewarkEach (Supplied on Full Reel) 3000$ 0.15
6000$ 0.14
12000$ 0.14
18000$ 0.14
30000$ 0.13
ON SemiconductorN/A 1$ 0.13

Description

General part information

NDS352AP Series

These P -Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.