Discrete Semiconductor Products
HS8MA2TCR1
ActiveRohm Semiconductor
MOSFET, N & P-CH, 30V, 7A, DFN3333 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
HS8MA2TCR1
ActiveRohm Semiconductor
MOSFET, N & P-CH, 30V, 7A, DFN3333 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HS8MA2TCR1 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5 A, 7 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC, 8.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF, 365 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerWDFN |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 80 mOhm, 35 mOhm |
| Supplier Device Package | DFN3333-9DC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HS8MA2 Series
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.
Documents
Technical documentation and resources