Discrete Semiconductor Products

JANTX1N3768

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DIODE GEN PURP 1KV 35A DO5

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Discrete Semiconductor Products

Active

DIODE GEN PURP 1KV 35A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX1N3768

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage	10 µA
Grade	Military
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	Stud, DO-5, DO-203AB
Package Name	DO-5
Qualification	297, MIL-PRF-19500
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	1 kV
Voltage - Forward (Vf) (Max)	2.3 V

Part	Current - Reverse Leakage	Technology	Package Name	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Package / Case	Current - Average Rectified (Io)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Grade	Qualification
Microchip Technology 1N3768	10 µA	Standard	DO-203AB (DO-5)	Stud Mount	175 °C	-65 °C	1 kV	1.4 V	DO-203AB DO-5 Stud	35 A	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns
Microchip Technology JANTX1N3768	10 µA	Standard	DO-5	Chassis Stud Mount	175 °C	-65 °C	1 kV	2.3 V	DO-203AB DO-5 Stud	35 A	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	Military	297 MIL-PRF-19500

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Bulk	100	$ 52.99	1m+
	N/A	0	$ 52.99	1m+

3D models and CAD resources for this part

General part information

Diode 1000 V 35A Chassis, Stud Mount DO-5

Technical documentation and resources