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SOT-363
Discrete Semiconductor Products

NVJD4152PT1G

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ON Semiconductor

TRENCH SMALL SIGNAL DUAL P-CHANNEL MOSFET 20V DRAIN SOURCE VOLTAGE 1A CONTINUOUS DRAI

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SOT-363
Discrete Semiconductor Products

NVJD4152PT1G

Active
ON Semiconductor

TRENCH SMALL SIGNAL DUAL P-CHANNEL MOSFET 20V DRAIN SOURCE VOLTAGE 1A CONTINUOUS DRAI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVJD4152PT1G
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C880 mA
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds155 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]272 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs260 mOhm
Supplier Device PackageSC70-6, SC-88, SOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
Digi-Reel® 1$ 0.40
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
15000$ 0.09
30000$ 0.09
75000$ 0.09
NewarkEach (Supplied on Full Reel) 3000$ 0.14
6000$ 0.12
12000$ 0.10
18000$ 0.10
30000$ 0.09

Description

General part information

NVJD4152P Series

Automotive Power MOSFET ideal for low power applications. 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.