
Discrete Semiconductor Products
NVJD4152PT1G
ActiveON Semiconductor
TRENCH SMALL SIGNAL DUAL P-CHANNEL MOSFET 20V DRAIN SOURCE VOLTAGE 1A CONTINUOUS DRAI
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Discrete Semiconductor Products
NVJD4152PT1G
ActiveON Semiconductor
TRENCH SMALL SIGNAL DUAL P-CHANNEL MOSFET 20V DRAIN SOURCE VOLTAGE 1A CONTINUOUS DRAI
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Technical Specifications
Parameters and characteristics for this part
| Specification | NVJD4152PT1G |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 880 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 155 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 272 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 260 mOhm |
| Supplier Device Package | SC70-6, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NVJD4152P Series
Automotive Power MOSFET ideal for low power applications. 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources