Discrete Semiconductor Products
STD85N10F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 100 V, 0.0085 OHM TYP., 70 A STRIPFET F7 POWER MOSFET IN A DPAK PACKAGE
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Discrete Semiconductor Products
STD85N10F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 100 V, 0.0085 OHM TYP., 70 A STRIPFET F7 POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD85N10F7AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 85 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.88 | |
| 10 | $ 1.56 | |||
| 100 | $ 1.24 | |||
| 500 | $ 1.05 | |||
| 1000 | $ 0.89 | |||
| Digi-Reel® | 1 | $ 1.88 | ||
| 10 | $ 1.56 | |||
| 100 | $ 1.24 | |||
| 500 | $ 1.05 | |||
| 1000 | $ 0.89 | |||
| N/A | 19956 | $ 2.18 | ||
| Tape & Reel (TR) | 2500 | $ 0.85 | ||
| 5000 | $ 0.81 | |||
| 12500 | $ 0.79 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.72 | |
| 10 | $ 2.01 | |||
| 25 | $ 1.85 | |||
| 50 | $ 1.69 | |||
| 100 | $ 1.53 | |||
| 250 | $ 1.51 | |||
| 500 | $ 1.31 | |||
| 1000 | $ 1.23 | |||
Description
General part information
STD85N10F7AG Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources