Specification	NTMFS4C06NCT1G

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max) [Max]	30.5 W, 2.55 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

NTMFS4C06NC Series

Single N-Channel Power MOSFET 30V, 69A, 4mΩ

Part	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Supplier Device Package	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTMFS4C06NCT1G	N-Channel	2.55 W 30.5 W	26 nC	1683 pF	MOSFET (Metal Oxide)	4 mOhm	2.1 V	4.5 V 10 V	8-PowerTDFN 5 Leads	20 V	5-DFN (5x6)	8-SOFL	Surface Mount	30 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL

Technical documentation and resources