Catalog
Single N-Channel Power MOSFET 30V, 69A, 4mΩ
Key Features
• Low RDSon
• Low Capacitance
• Optimized Gate Charge
Description
AI
Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL
Beta
⌘K
Single N-Channel Power MOSFET 30V, 69A, 4mΩ
Single N-Channel Power MOSFET 30V, 69A, 4mΩ
| Part | FET Type | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs (Max) | Supplier Device Package | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | N-Channel | 2.55 W 30.5 W | 26 nC | 1683 pF | MOSFET (Metal Oxide) | 4 mOhm | 2.1 V | 4.5 V 10 V | 8-PowerTDFN 5 Leads | 20 V | 5-DFN (5x6) | 8-SOFL | Surface Mount | 30 V | -55 °C | 150 °C |