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Discrete Semiconductor Products

CSD17318Q2

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 16.9 MOHM

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WSON (DQK)
Discrete Semiconductor Products

CSD17318Q2

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 16.9 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17318Q2
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6 nC
Input Capacitance (Ciss) (Max) @ Vds879 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)16 W
Rds On (Max) @ Id, Vgs15.1 mOhm
Supplier Device Package6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.13
9000$ 0.11
30000$ 0.11
75000$ 0.11
Texas InstrumentsLARGE T&R 1$ 0.23
100$ 0.15
250$ 0.12
1000$ 0.08

Description

General part information

CSD17318Q2 Series

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.