Specification	NVMJS2D5N06CLTWG

Current - Continuous Drain (Id) @ 25°C	31 A, 164 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	3.9 W, 113 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NVMJS2D5N06CL Series

Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel

Part	Power Dissipation (Max)	Mounting Type	FET Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Grade	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NVMJS2D5N06CLTWG	3.9 W 113 W	Surface Mount	N-Channel	8-LFPAK	20 V	31 A 164 A	AEC-Q101	3600 pF	MOSFET (Metal Oxide)	52 nC	2.4 mOhm	Automotive	8-LFPAK56 SOT-1205	60 V	2 V	-55 °C	175 ░C	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.50
		10	$ 1.61
		100	$ 1.10
		500	$ 0.89
		1000	$ 0.82
	Digi-Reel®	1	$ 2.50
		10	$ 1.61
		100	$ 1.10
		500	$ 0.89
		1000	$ 0.82
	Tape & Reel (TR)	3000	$ 0.74
Newark	Each (Supplied on Cut Tape)	1	$ 2.52
		10	$ 1.66
		25	$ 1.62
		50	$ 1.38
		100	$ 1.14
		250	$ 1.13
		500	$ 0.92
		1000	$ 0.83
ON Semiconductor	N/A	1	$ 0.68

Description

General part information

NVMJS2D5N06CL Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.