NVMJS2D5N06CL Series

Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel

Catalog

Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel

Part	Power Dissipation (Max)	Mounting Type	FET Type	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Grade	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NVMJS2D5N06CLTWG	3.9 W 113 W	Surface Mount	N-Channel	8-LFPAK	20 V	31 A 164 A	AEC-Q101	3600 pF	MOSFET (Metal Oxide)	52 nC	2.4 mOhm	Automotive	8-LFPAK56 SOT-1205	60 V	2 V	-55 °C	175 ░C	4.5 V 10 V

Catalog

Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel

Key Features

• Small Footprint (5x6 mm)

• Low RDS (ON)

• Low QGand Capacitance

• LFPAK8 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.