Discrete Semiconductor Products

NXH011T120M3F2PTHG

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SILICON CARBIDE (SIC) MODULE – 11 MOHM SIC M3S MOSFET, 1200 V, TNPC TOPOLOGY IN F2 PACKAGE

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Discrete Semiconductor Products

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SILICON CARBIDE (SIC) MODULE – 11 MOHM SIC M3S MOSFET, 1200 V, TNPC TOPOLOGY IN F2 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	NXH011T120M3F2PTHG

Configuration	4 N-Channel (Solar Inverter)
Current - Continuous Drain (Id) @ 25°C	91 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	306 nC
Input Capacitance (Ciss) (Max) @ Vds	6331 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max	272 W
Rds On (Max) @ Id, Vgs	16 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.4 V

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

Part	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Package / Case	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NXH011T120M3F2PTHG	1200 V	1.2 kV	6331 pF	272 W	Module	4 N-Channel (Solar Inverter)	91 A	4.4 V	Chassis Mount	-40 C	175 °C	Silicon Carbide (SiC)	16 mOhm	306 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NXH011T120M3F2PTHG is a power module containing an 11 mohm / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC in an F2 package.

Technical documentation and resources