NXH011T120M3F2PTHG Series

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

Catalog

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

Part	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Package / Case	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NXH011T120M3F2PTHG	1200 V	1.2 kV	6331 pF	272 W	Module	4 N-Channel (Solar Inverter)	91 A	4.4 V	Chassis Mount	-40 C	175 °C	Silicon Carbide (SiC)	16 mOhm	306 nC

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology in F2 Package

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

• 11 mohm / 1200 V M3S SiC MOSFET TNPC

• 15V to 18V Gate Drive

The NXH011T120M3F2PTHG is a power module containing an 11 mohm / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC in an F2 package.