Discrete Semiconductor Products
NTMTSC1D6N10MCTXG
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 267 A, 0.00142 OHM, TDFNW, SURFACE MOUNT
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
NTMTSC1D6N10MCTXG
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 267 A, 0.00142 OHM, TDFNW, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTMTSC1D6N10MCTXG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A, 267 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7630 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 5.1 W, 291 W |
| Rds On (Max) @ Id, Vgs | 1.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.09 | |
| 10 | $ 4.80 | |||
| 100 | $ 3.50 | |||
| 500 | $ 3.02 | |||
| Digi-Reel® | 1 | $ 7.09 | ||
| 10 | $ 4.80 | |||
| 100 | $ 3.50 | |||
| 500 | $ 3.02 | |||
| Tape & Reel (TR) | 3000 | $ 3.02 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 7.28 | |
| 10 | $ 4.95 | |||
| 25 | $ 4.50 | |||
| 50 | $ 4.07 | |||
| 100 | $ 3.62 | |||
| 250 | $ 3.61 | |||
| 500 | $ 3.14 | |||
| ON Semiconductor | N/A | 1 | $ 2.78 | |
Description
General part information
NTMTSC1D6N10MC Series
Industrial Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection.
Documents
Technical documentation and resources