NTMTSC1D6N10MC Series

Single N-Channel Power MOSFET 100V, 367A, 1.7mΩ

Catalog

Single N-Channel Power MOSFET 100V, 367A, 1.7mΩ

Part	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor NTMTSC1D6N10MCTXG	MOSFET (Metal Oxide)	8-PowerTDFN	106 nC	5.1 W 291 W	-55 °C	175 ░C	20 V	100 V	7630 pF	N-Channel	1.7 mOhm	35 A 267 A	4 V	Surface Mount Wettable Flank

Catalog

Single N-Channel Power MOSFET 100V, 367A, 1.7mΩ

Key Features

• Small Footprint (8x8 mm)

• Low RDS(on)

• Low QGand Capacitance

• Wettable Flank Option

• RoHS Compliant

• Dualcool Enabled

Description

Industrial Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection.