Discrete Semiconductor Products

SQJ154EP-T1_GE3

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AUTOMOTIVE N-CHANNEL 40 V (D-S)

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Discrete Semiconductor Products

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AUTOMOTIVE N-CHANNEL 40 V (D-S)

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ154EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	243 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	214 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Power Dissipation (Max)	Qualification	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Grade	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type
Vishay General Semiconductor - Diodes Division SQJ154EP-T1_GE3	N-Channel	214 W	AEC-Q101	PowerPAK® SO-8	2.5 mOhm	40 V	Automotive	10 V	65 nC	20 V	3620 pF	MOSFET (Metal Oxide)	PowerPAK® SO-8	243 A	-55 °C	175 ░C	3.5 V	Surface Mount

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General part information

N-Channel 40 V 243A (Tc) 214W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources