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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

JANTXV2N5154

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Microchip Technology

TRANS GP BJT NPN 80V 2A 1000MW 3-PIN TO-39 BAG

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Microchip Technology-GRP-A-DATA-JAN2N2904 GP BJT Trans GP BJT PNP 40V 0.6A 600mW 3-Pin TO-39 Bag
Discrete Semiconductor Products

JANTXV2N5154

Unknown
Microchip Technology

TRANS GP BJT NPN 80V 2A 1000MW 3-PIN TO-39 BAG

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5154
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce70 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
QualificationMIL-PRF-19500/544
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic [Max]1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 15.29
Microchip DirectN/A 1$ 16.46
NewarkEach 100$ 15.29
500$ 14.70

Description

General part information

JANTXV2N5154-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.

Documents

Technical documentation and resources