Specification	PMN30XPEAX

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V, 8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1025 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-457, SC-74
Power Dissipation (Max)	660 mW
Power Dissipation (Max)	7.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

PMN30XPEA Series

20 V, P-channel Trench MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Grade	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Qualification	Supplier Device Package
Nexperia USA Inc. PMN30XPEAX	2.5 V 8 V	660 mW	7.5 W	1025 pF	P-Channel	MOSFET (Metal Oxide)	Automotive	Surface Mount	1.3 V	16 nC	12 V	5.4 A	175 °C	-55 °C	33 mOhm	SC-74 SOT-457	20 V	AEC-Q101	6-TSOP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3000	$ 0.18
	Tape & Reel (TR)	3000	$ 0.13
		6000	$ 0.12
		9000	$ 0.11
		30000	$ 0.11
		75000	$ 0.10

Description

General part information

PMN30XPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.