Catalog
20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Technology | Grade | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Qualification | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.5 V 8 V | 660 mW | 7.5 W | 1025 pF | P-Channel | MOSFET (Metal Oxide) | Automotive | Surface Mount | 1.3 V | 16 nC | 12 V | 5.4 A | 175 °C | -55 °C | 33 mOhm | SC-74 SOT-457 | 20 V | AEC-Q101 | 6-TSOP |