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STD18N65M5
Discrete Semiconductor Products

STD18N65M5

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STMicroelectronics

N-CHANNEL 650 V, 198 MOHM TYP., 15 A MDMESH M5 POWER MOSFET IN A DPAK PACKAGE

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STD18N65M5
Discrete Semiconductor Products

STD18N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 198 MOHM TYP., 15 A MDMESH M5 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD18N65M5
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1240 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs220 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5101$ 3.49
NewarkEach (Supplied on Cut Tape) 1$ 3.88
10$ 3.00
25$ 2.81
50$ 2.62
100$ 2.44
250$ 2.28
500$ 2.12
1000$ 2.02

Description

General part information

STD18N65M5 Series

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.