Discrete Semiconductor Products

PMPB100ENEX

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MOSFET DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB100ENEX

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	157 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max) [Max]	3.3 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Supplier Device Package	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP PMPB100ENEAX	6-UDFN Exposed Pad	DFN2020MD-6	20 V	Surface Mount
Freescale Semiconductor - NXP PMPB100XPEAX	6-UDFN Exposed Pad	DFN2020MD-6		Surface Mount	122 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	388 pF	P-Channel	3.2 A	5 nC	550 mW	AEC-Q101	3 V 4.5 V	20 V	8 V	-10 V	1.25 V	Automotive
Freescale Semiconductor - NXP PMPB100ENEX	6-UDFN Exposed Pad	DFN2020MD-6	20 V	Surface Mount	72 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	157 pF	N-Channel	5.1 A		3.3 W		4.5 V 10 V	30 V			2.5 V		5 nC

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General part information

N-Channel 30 V 5.1A (Ta) 3.3W (Ta) Surface Mount DFN2020MD-6

Technical documentation and resources