PMPB100 Series
Manufacturer: Freescale Semiconductor - NXP
PMPB100ENEA/SOT1220/SOT1220
| Part | Package / Case | Supplier Device Package | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Vgs (Max) [Min] | Vgs(th) (Max) @ Id | Grade | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 6-UDFN Exposed Pad | DFN2020MD-6 | 20 V | Surface Mount | |||||||||||||||||
Freescale Semiconductor - NXP | 6-UDFN Exposed Pad | DFN2020MD-6 | Surface Mount | 122 mOhm | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 388 pF | P-Channel | 3.2 A | 5 nC | 550 mW | AEC-Q101 | 3 V 4.5 V | 20 V | 8 V | -10 V | 1.25 V | Automotive | ||
Freescale Semiconductor - NXP | 6-UDFN Exposed Pad | DFN2020MD-6 | 20 V | Surface Mount | 72 mOhm | -55 °C | 175 ░C | MOSFET (Metal Oxide) | 157 pF | N-Channel | 5.1 A | 3.3 W | 4.5 V 10 V | 30 V | 2.5 V | 5 nC |