
FCU2250N80Z
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 2.6 A, 2.25 Ω, IPAK
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FCU2250N80Z
ActivePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 2.6 A, 2.25 Ω, IPAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | FCU2250N80Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.6 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 39 W |
| Rds On (Max) @ Id, Vgs | 2.25 Ohm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 385 | $ 0.78 | |
Description
General part information
FCU2250N80Z Series
SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.
Documents
Technical documentation and resources