FCU2250N80Z Series

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)
ON Semiconductor FCU2250N80Z	MOSFET (Metal Oxide)	-55 °C	150 °C	2.6 A	14 nC	2.25 Ohm	4.5 V	IPAK	Through Hole	800 V	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	10 V	585 pF	20 V	39 W

Catalog

Power MOSFET, N-Channel, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK

Key Features

• RDS(on)= 1.87 Ω (Typ.)

• Ultra Low Gate Charge (Typ. Qg= 11 nC)

• Low Eoss(Typ. 1.1 uJ @ 400V)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 51 pF)

• 100% Avalanche Tested

• RoHS Complian

• ESD Improved Capability

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.