Discrete Semiconductor Products

IRFB9N65APBF

LTB

MOSFET N-CH 650V 8.5A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 650V 8.5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB9N65APBF

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1417 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs	930 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Supplier Device Package	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division IRFB9N30A	10 V	4 V	9.3 A	450 mOhm	96 W	MOSFET (Metal Oxide)	TO-220AB	TO-220-3	30 V	920 pF	-55 °C	150 °C	300 V	N-Channel	Through Hole
Vishay General Semiconductor - Diodes Division IRFB9N65APBF	10 V	4 V	8.5 A	930 mOhm	167 W	MOSFET (Metal Oxide)	TO-220AB	TO-220-3	30 V	1417 pF	-55 °C	150 °C	650 V	N-Channel	Through Hole	48 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.71

General part information

N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB

Technical documentation and resources