IRFB9 Series

Catalog

MOSFET N-CH 300V 9.3A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Supplier Device Package	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division IRFB9N30A	10 V	4 V	9.3 A	450 mOhm	96 W	MOSFET (Metal Oxide)	TO-220AB	TO-220-3	30 V	920 pF	-55 °C	150 °C	300 V	N-Channel	Through Hole
Vishay General Semiconductor - Diodes Division IRFB9N65APBF	10 V	4 V	8.5 A	930 mOhm	167 W	MOSFET (Metal Oxide)	TO-220AB	TO-220-3	30 V	1417 pF	-55 °C	150 °C	650 V	N-Channel	Through Hole	48 nC