Discrete Semiconductor Products

STFI6N62K3

Obsolete

MOSFET N CH 620V 5.5A I2PAKFP

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Discrete Semiconductor Products

Obsolete

MOSFET N CH 620V 5.5A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI6N62K3

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	875 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STFI6N80K5	30 V	800 V	1.6 Ohm	4.5 A	10 V	TO-281 (I2PAKFP)	TO-262-3 Full Pack I2PAK	150 °C	-55 °C	N-Channel	25 W	270 pF	MOSFET (Metal Oxide)	Through Hole	5 V	13 nC
STMicroelectronics STFI6N62K3		620 V	1.2 Ohm	5.5 A	10 V	TO-281 (I2PAKFP)	TO-262-3 Full Pack I2PAK			N-Channel		875 pF	MOSFET (Metal Oxide)	Through Hole	4.5 V	34 nC	150 °C	30 V
STMicroelectronics STFI6N65K3		650 V	1.3 Ohm	5.4 A	10 V	TO-281 (I2PAKFP)	TO-262-3 Full Pack I2PAK			N-Channel			MOSFET (Metal Oxide)	Through Hole	4.5 V		150 °C	30 V	880 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 620 V 5.5A (Tc) 30W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources