STN93003
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 400 V, 1.5 A, 1.6 W, SOT-223, SURFACE MOUNT
Deep-Dive with AI
Search across all available documentation for this part.
STN93003
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 400 V, 1.5 A, 1.6 W, SOT-223, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STN93003 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.5 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 16 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1.6 W |
| Supplier Device Package | SOT-223 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STN93003 Series
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN83003, its complementary NPN transistor.
Documents
Technical documentation and resources