Specification	CSD19538Q3A

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.8 W, 23 W
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	8-VSONP (3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

CSD19538Q3A Series

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Part	Vgs (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case
Texas Instruments CSD19538Q2	20 V	6-WSON (2x2)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	5.6 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm
Texas Instruments CSD19538Q3A	20 V	8-VSONP (3x3.3)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	4.3 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm	15 A	2.8 W 23 W	8-PowerVDFN
Texas Instruments CSD19538Q3AT	20 V	8-VSONP (3x3.3)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	4.3 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm	15 A	2.8 W 23 W	8-PowerVDFN
Texas Instruments CSD19538Q2R
Texas Instruments CSD19538Q2T	20 V	6-WSON (2x2)	Surface Mount	-55 °C	150 °C	3.8 V	100 V	6 V 10 V	5.6 nC	MOSFET (Metal Oxide)	N-Channel	59 mOhm	13.1 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

Technical documentation and resources