Discrete Semiconductor Products

SICB0860P-TP

Active

DIODE SIL CARBIDE 650V 8A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SIL CARBIDE 650V 8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICB0860P-TP

Capacitance @ Vr, F	346 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	36 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	D2PAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr
Micro Commercial Components SICB0860P-TP	650 V	Surface Mount	0 ns	175 ░C	-55 C	8 A	346 pF	No Recovery Time	SiC (Silicon Carbide) Schottky	1.6 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Surface Mount D2PAK

Technical documentation and resources