SICB0860 Series

Catalog

DIODE SIL CARBIDE 650V 8A D2PAK

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr
Micro Commercial Components SICB0860P-TP	650 V	Surface Mount	0 ns	175 ░C	-55 C	8 A	346 pF	No Recovery Time	SiC (Silicon Carbide) Schottky	1.6 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	36 µA