APTCV40H60CT1G

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600V/FULL BRIDGE/SI MOSFET MODULES

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Discrete Semiconductor Products

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600V/FULL BRIDGE/SI MOSFET MODULES

Technical Specifications

Parameters and characteristics for this part

Specification	APTCV40H60CT1G

Configuration	Full Bridge
Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	3.15 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP1
Power - Max [Max]	176 W
Supplier Device Package	SP1
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

600V/Full bridge/Si MOSFET Modules

Part	Input	Configuration	Mounting Type	Supplier Device Package	IGBT Type	Vce(on) (Max) @ Vge, Ic	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Input Capacitance (Cies) @ Vce	NTC Thermistor
Microchip Technology APTCV40H60CT1G	Standard	Full Bridge	Chassis Mount	SP1	Trench Field Stop	1.9 V	SP1	176 W	600 V	150 °C	-40 °C	250 µA	80 A	3.15 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* Super junction MOSFET

* Ultra low RDSon

* Low Miller capacitance

Technical documentation and resources