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PowerPAK SO-8
Discrete Semiconductor Products

SIR640ADP-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 40V 41.6A/100A PPAK

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PowerPAK SO-8
Discrete Semiconductor Products

SIR640ADP-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 40V 41.6A/100A PPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR640ADP-T1-GE3
Current - Continuous Drain (Id) @ 25°C100 A
Current - Continuous Drain (Id) @ 25°C41.6 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]90 nC
Input Capacitance (Ciss) (Max) @ Vds4240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)6.25 W, 104 W
Rds On (Max) @ Id, Vgs2 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.85
10$ 1.53
100$ 1.22
500$ 1.03
1000$ 0.88
Digi-Reel® 1$ 1.85
10$ 1.53
100$ 1.22
500$ 1.03
1000$ 0.88
Tape & Reel (TR) 3000$ 0.83
6000$ 0.80
9000$ 0.78

Description

General part information

SIR640 Series

N-Channel 40 V 41.6A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources