SIR640 Series

Catalog

MOSFET N-CH 40V 60A PPAK SO-8

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Vgs(th) (Max) @ Id	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIR640DP-T1-GE3	-55 °C	150 °C	1.7 mOhm	6.25 W 104 W	40 V	PowerPAK® SO-8	113 nC	60 A	4.5 V 10 V	N-Channel	PowerPAK® SO-8	2.3 V	MOSFET (Metal Oxide)	Surface Mount	4930 pF	20 V
Vishay General Semiconductor - Diodes Division SIR640ADP-T1-GE3	-55 °C	150 °C		6.25 W 104 W	40 V	PowerPAK® SO-8	90 nC	41.6 A	4.5 V 10 V	N-Channel	PowerPAK® SO-8	2 V	MOSFET (Metal Oxide)	Surface Mount		20 V	4240 pF	100 A	2 mOhm