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Discrete Semiconductor Products

JAN2N6051

Unknown
Microchip Technology

POWER BJT TO-3 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Discrete Semiconductor Products

JAN2N6051

Unknown
Microchip Technology

POWER BJT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N6051
Current - Collector (Ic) (Max) [Max]12 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-3
Power - Max [Max]150 W
QualificationMIL-PRF-19500/501
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 47.51
Microchip DirectN/A 1$ 51.17
NewarkEach 100$ 47.51
500$ 45.69

Description

General part information

JAN2N6051-Transistor Series

This family of 2N6051 and 2N6502 high speed PNP transistors are rated at 12 amps and are military qualified up to a JAN level for high-reliability applications. These transistors are available in TO-204AA (TO-3) isolated package with 180 degree lead orientation.

Documents

Technical documentation and resources