Specification	BCW65CLT1

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

BCW65AL Series

NPN Bipolar Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type
ON Semiconductor BCW65ALT1G	100 hFE	32 V	SC-59 SOT-23-3 TO-236-3	800 mA	SOT-23-3 (TO-236)	100 MHz	Surface Mount	-55 °C	150 °C	20 nA	700 mV	225 mW	NPN
ON Semiconductor BCW65CLT1	250	32 V	SC-59 SOT-23-3 TO-236-3	800 mA	SOT-23-3 (TO-236)	100 MHz	Surface Mount	-55 °C	150 °C	20 nA	700 mV	225 mW	NPN
ON Semiconductor BCW65CLT1G	250	32 V	SC-59 SOT-23-3 TO-236-3	800 mA	SOT-23-3 (TO-236)	100 MHz	Surface Mount	-55 °C	150 °C	20 nA	700 mV	225 mW	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BCW65AL Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing