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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

BCW65ALT1G

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 32 V, 800 MA, 225 MW, SOT-23, SURFACE MOUNT

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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

BCW65ALT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 32 V, 800 MA, 225 MW, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationBCW65ALT1G
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max)32 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
Digi-Reel® 1$ 0.19
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
Tape & Reel (TR) 3000$ 0.04
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Cut Tape) 30000$ 0.03
ON SemiconductorN/A 1$ 0.02

Description

General part information

BCW65AL Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.