JAN2N6547

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POWER BJT TO-3 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

POWER BJT TO-3 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N6547

Current - Collector (Ic) (Max) [Max]	15 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	12
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	175 W
Qualification	MIL-PRF-19500/525
Supplier Device Package	TO-204AA (TO-3)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Qualification	Transistor Type	Supplier Device Package	Grade	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]
Microchip Technology JAN2N6547	5 V	12	Through Hole	15 A	175 W	400 V	MIL-PRF-19500/525	NPN	TO-204AA (TO-3)	Military	TO-204AA TO-3
Microchip Technology 2N6547	5 V	15	Through Hole	15 A	175 W	400 V		NPN			TO-204AA TO-3	-65 ░C	200 °C	1 mA
Microchip Technology JANTX2N6547	5 V	12	Through Hole	15 A	175 W	400 V	MIL-PRF-19500/525	NPN	TO-204AA (TO-3)	Military	TO-204AA TO-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 15 A 175 W Through Hole TO-204AA (TO-3)

Technical documentation and resources