FDS6612A-NB5E029A

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ON Semiconductor

SINGLE N-CHANNEL, LOGIC LEVEL, POWER TRENCH® MOSFET 30V, 8.4A, 22MΩ

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DocumentsPackage Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS6612A-NB5E029A

Active

ON Semiconductor

SINGLE N-CHANNEL, LOGIC LEVEL, POWER TRENCH® MOSFET 30V, 8.4A, 22MΩ

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DocumentsPackage Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6612A-NB5E029A

Current - Continuous Drain (Id) @ 25°C	8.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.6 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS6612A Series

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 8.4A, 22mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS6612A-NB5E029A	560 pF	MOSFET (Metal Oxide)	20 V	N-Channel	4.5 V 10 V	30 V	1 W	7.6 nC	-55 °C	150 °C	8.4 A	22 mOhm	Surface Mount	3 V	8-SOIC	8-SOIC	3.9 mm	0.154 in
ON Semiconductor FDS6612A	560 pF	MOSFET (Metal Oxide)	20 V	N-Channel	4.5 V 10 V	30 V	2.5 W	7.6 nC	-55 °C	150 °C	8.4 A	22 mOhm	Surface Mount	3 V	8-SOIC	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1316	$ 0.38

Description

General part information

FDS6612A Series

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Documents

Technical documentation and resources

Package Drawing-751EB-SOIC8

Package Drawing