Discrete Semiconductor Products
STU6N95K5
ActiveSTMicroelectronics
N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN AN IPAK PACKAGE
Discrete Semiconductor Products
STU6N95K5
ActiveSTMicroelectronics
N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN AN IPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STU6N95K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 450 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 1.25 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STU6N95K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources