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TO-263
Discrete Semiconductor Products

FDB8447L

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET, 40V, 50A, 8.5MΩ

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TO-263
Discrete Semiconductor Products

FDB8447L

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET, 40V, 50A, 8.5MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB8447L
Current - Continuous Drain (Id) @ 25°C15 A, 50 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC
Input Capacitance (Ciss) (Max) @ Vds2620 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.1 W, 60 W
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.12
10$ 2.02
100$ 1.40
Digi-Reel® 1$ 3.12
10$ 2.02
100$ 1.40
Tape & Reel (TR) 800$ 1.08
1600$ 1.00
2400$ 0.96
4000$ 0.96

Description

General part information

FDB8447L Series

This N-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low RDS(on)and optimized BVDSScapability to offer superior performance benefit in the application.