FDB8447L Series

N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

Catalog

N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)
ON Semiconductor FDB8447L	4.5 V 10 V	-55 °C	150 °C	2620 pF	3.1 W 60 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263 (D2PAK)	15 A 50 A	3 V	52 nC	MOSFET (Metal Oxide)	40 V	N-Channel	20 V

Catalog

N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

Key Features

• Max rDS(on)= 8.5mΩ at VGS= 10V, ID= 14A

• Max rDS(on)= 11mΩ at VGS= 4.5V, ID= 11A

• Fast Switching

• RoHS compliant

Description

This N-Channel MOSFET has been produced using a proprietary PowerTrench®technology to deliver low RDS(on)and optimized BVDSScapability to offer superior performance benefit in the application.