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SOT-23-3
Discrete Semiconductor Products

MMBT4126

Obsolete
ON Semiconductor

TRANS GP BJT PNP 25V 0.2A 350MW 3-PIN SOT-23 T/R

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SOT-23-3
Discrete Semiconductor Products

MMBT4126

Obsolete
ON Semiconductor

TRANS GP BJT PNP 25V 0.2A 350MW 3-PIN SOT-23 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT4126
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]350 mW
Supplier Device PackageSOT-23-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MMBT4126LT1 Series

This device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier.