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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBT4126LT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 25 V, 200 MA, 225 MW, SOT-23, SURFACE MOUNT

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ONSEMI MMBZ18VALT1G.
Discrete Semiconductor Products

MMBT4126LT3G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 25 V, 200 MA, 225 MW, SOT-23, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT4126LT3G
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]225 mW
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
2000$ 0.03
5000$ 0.03
Digi-Reel® 1$ 0.16
10$ 0.10
100$ 0.06
500$ 0.04
1000$ 0.04
2000$ 0.03
5000$ 0.03
Tape & Reel (TR) 10000$ 0.02
20000$ 0.02
30000$ 0.02
50000$ 0.02
70000$ 0.02
100000$ 0.02
250000$ 0.02
500000$ 0.01
NewarkEach (Supplied on Full Reel) 12000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MMBT4126LT1 Series

This device is designed for general purpose amplifier and switch-ing applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier.