Discrete Semiconductor Products

NDS0605-F169

Obsolete

ON Semiconductor

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -60V, -0.18A, 5Ω

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Search across all available documentation for this part.

DocumentsPackage Drawing-318BM-SOT-23 Datasheet

Discrete Semiconductor Products

NDS0605-F169

Obsolete

ON Semiconductor

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -60V, -0.18A, 5Ω

Deep-Dive with AI

DocumentsPackage Drawing-318BM-SOT-23 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDS0605-F169

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.5 nC
Input Capacitance (Ciss) (Max) @ Vds	79 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NDS0605 Series

P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω

Part	Vgs (Max)	Mounting Type	Package / Case	Technology	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NDS0605-F169	20 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	P-Channel	SOT-23-3	180 mA	4.5 V 10 V	-55 °C	150 °C	360 mW	5 Ohm	3 V	2.5 nC	60 V	79 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDS0605 Series

This P-Channel enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.