NDS0605 Series

P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω

Catalog

P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω

Part	Vgs (Max)	Mounting Type	Package / Case	Technology	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NDS0605-F169	20 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	P-Channel	SOT-23-3	180 mA	4.5 V 10 V	-55 °C	150 °C	360 mW	5 Ohm	3 V	2.5 nC	60 V	79 pF

Catalog

P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω

Key Features

-0.18 A, -60 V. RDS(ON)= 5 Ω @ VGS= -10 V.

• Voltage controlled p-channel small signal switch.

• High density cell design for extremely low RDS(ON).

• High saturation current.

Description

This P-Channel enhancement mode power field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.