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R-1
Discrete Semiconductor Products

1F2

Active
SMC Diode Solutions

DIODE GEN PURP 100V 1A R-1

R-1
Discrete Semiconductor Products

1F2

Active
SMC Diode Solutions

DIODE GEN PURP 100V 1A R-1

Technical Specifications

Parameters and characteristics for this part

Specification1F2
Capacitance15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseR-1, Axial
Package NameR-1
Reverse Recovery Time (trr)150 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max)1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Box (TB) 50000$ 0.03<4d

CAD

3D models and CAD resources for this part

Description

General part information

- Series

Diode 100 V 1A Through Hole R-1

Documents

Technical documentation and resources